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وبسایت مهندسی الکترونیک و کامپیوتر

ترجمه مقاله Design and evaluation of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized double top BSF layer

دسته بندی: لیزر و اپتیک ترجمه مقاله
ترجمه مقاله Design and evaluation of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized double top BSF layer
Mohandes360.ir
6 4 1399

The presence and performance of the tunnel junction layer and back surface field (BSF) layers is the chief reason behind the high efficiency of the multi-junction solar cells. In this work, the focus is on thes election of a suitable material for the tunnel junction along with introducing a new top BSF layer. The simulation work is carried out in ATLAS TCAD. The various performance parameters like open circuit voltage (VOC), short circuit current density (JSC), fill factor (FF) and efficiency (n) are extracted from the proposed solar cell model and are compared with published results to ascertain the accuracy of the present work. Other parameters like the photogeneration rate, spectral response, potential developed,electric field are also determined. I–V curve and the power curve are also plotted for the proposed model.For this proposed structure VOC= 2.668 V, JSC= 18.2 mA/cm2, FF = 88.29% and EFF = 40.879% are obtained for 1000 suns illuminated under standard AM1.5G spectrum. The obtained outputs and the modeling steps are elaborately explained.
 

ادامه مطلب

نویسنده: حمیدرضا ارزبین

ترجمه مقاله Efficiency improvement of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized two BSF layer in top and bottom cells

دسته بندی: لیزر و اپتیک ترجمه مقاله
ترجمه مقاله Efficiency improvement of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized two BSF layer in top and bottom cells
Mohandes360.ir
6 4 1399

An optimized BSF (Back Surface Field) is a key layer for a multi junction or single junction solar cell. In this work, two BSF layers with different thicknesses have been used in the upper and the lower cell and simulations have been done using the Silvaco ATLAS numerical modelling tools. It has been also found that in under the current matching condition with thinner upper BSF layers (160 nm, 30 nm) and a thicker lower BSF layer (1000 nm, 30 nm), JSC short circuit current density and VOC open circuit voltage and conversion efficiency solar cell is improved. Major steps of simulation and its description and results have been compared to the previously published data in order to describe accuracy of the results. By selecting the best thickness of BSF layer, the efficiency can be increased up to 15% which happens because of increase in photo-generation rates and absorption in the solar cells. This article shows some characteristics of the proposed dual junction solar cell such as photo-generation rate, short circuit current density, open circuit voltage and efficiency of the device relative to thickness of BSF layers and change in materials of tunnel junction. The results show that in case of increase in thickness of BSF, efficiency is also increased. The highest efficiency is obtained in thickness of 160 nm, then the efficiency is decreased. The values of Jsc = 23.36 mA/cm2, Voc = 2.43 V, FF = 86.76% and η = 47.78% (1 sun) have also been obtained under AM1.5G illumination in the proposed structure which shows improvement in performance of the proposed device.
 

ادامه مطلب

نویسنده: حمیدرضا ارزبین