Numerical modeling and simulation help to optimize semiconductor devices such as solar cells in understanding key physi-cal phenomena and behaviors, thereby reducing time and cost. The development of solar energy engineering is progressed tremendously with the construction of integrated multi-junction solar cells based on III–V semiconductor compounds. In this study, an InGaP/GaAs double-junction solar cell is presented based on the back-surface field (BSF) layer. A unique and enhanced structure is created by introducing a 1.5-m-thick InAlGaP intrinsic material to the tunnel junction along with the introduction of the BSF top layer. In a single/multi-junction device, effective BSF is a crucial structural component for an efficient solar cell. Important parameters of open-circuit voltage (VOC), short-circuit current density (JSC), fill factor (FF), and efficiency (η) in the proposed solar cell model are calculated VOC = 2.7473 V, JSC = 1894.61 mA/cm2, FF = 87.544%, and η = 43.61%, respectively. The simulations are obtained at solar intensities (1000 suns) under the AM1.5G standard spectrum.
شبیه سازی مقاله Design and optimization of ARC solar cell with intrinsic layer and p–n junction in bottom cell under AM1.5G standard spectrum (2022)
18 اردیبهشت 1402
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