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وبسایت مهندسی الکترونیک و کامپیوتر

ترجمه مقاله Design and evaluation of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized double top BSF layer

دسته بندی: لیزر و اپتیک ترجمه مقاله
ترجمه مقاله Design and evaluation of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized double top BSF layer
Mohandes360.ir
6 4 1399

The presence and performance of the tunnel junction layer and back surface field (BSF) layers is the chief reason behind the high efficiency of the multi-junction solar cells. In this work, the focus is on thes election of a suitable material for the tunnel junction along with introducing a new top BSF layer. The simulation work is carried out in ATLAS TCAD. The various performance parameters like open circuit voltage (VOC), short circuit current density (JSC), fill factor (FF) and efficiency (n) are extracted from the proposed solar cell model and are compared with published results to ascertain the accuracy of the present work. Other parameters like the photogeneration rate, spectral response, potential developed,electric field are also determined. I–V curve and the power curve are also plotted for the proposed model.For this proposed structure VOC= 2.668 V, JSC= 18.2 mA/cm2, FF = 88.29% and EFF = 40.879% are obtained for 1000 suns illuminated under standard AM1.5G spectrum. The obtained outputs and the modeling steps are elaborately explained.
 

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نویسنده: حمیدرضا ارزبین

ترجمه مقاله Efficiency improvement of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized two BSF layer in top and bottom cells

دسته بندی: لیزر و اپتیک ترجمه مقاله
ترجمه مقاله Efficiency improvement of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized two BSF layer in top and bottom cells
Mohandes360.ir
6 4 1399

An optimized BSF (Back Surface Field) is a key layer for a multi junction or single junction solar cell. In this work, two BSF layers with different thicknesses have been used in the upper and the lower cell and simulations have been done using the Silvaco ATLAS numerical modelling tools. It has been also found that in under the current matching condition with thinner upper BSF layers (160 nm, 30 nm) and a thicker lower BSF layer (1000 nm, 30 nm), JSC short circuit current density and VOC open circuit voltage and conversion efficiency solar cell is improved. Major steps of simulation and its description and results have been compared to the previously published data in order to describe accuracy of the results. By selecting the best thickness of BSF layer, the efficiency can be increased up to 15% which happens because of increase in photo-generation rates and absorption in the solar cells. This article shows some characteristics of the proposed dual junction solar cell such as photo-generation rate, short circuit current density, open circuit voltage and efficiency of the device relative to thickness of BSF layers and change in materials of tunnel junction. The results show that in case of increase in thickness of BSF, efficiency is also increased. The highest efficiency is obtained in thickness of 160 nm, then the efficiency is decreased. The values of Jsc = 23.36 mA/cm2, Voc = 2.43 V, FF = 86.76% and η = 47.78% (1 sun) have also been obtained under AM1.5G illumination in the proposed structure which shows improvement in performance of the proposed device.
 

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نویسنده: حمیدرضا ارزبین

ترجمه مقاله Integrated Optical Devices of InGaAsP-InP Heterojunction Phototransistor and InnerStripe Light-Emitting Diode

دسته بندی: لیزر و اپتیک ترجمه مقاله
ترجمه مقاله Integrated Optical Devices of InGaAsP-InP Heterojunction Phototransistor and InnerStripe Light-Emitting Diode
Mohandes360.ir
8 4 1399

Abstract - New integrated optical devices combining an InGaAsP/InP HPT and an inner-stripe LED are proposed and their fabrication processes are described. The device functions of light amplification, optical bistability, and optical switching are demonstrated in the 1-um wavelength region.

I. INTRODUCTION: MONOLITHIC integration of well-developed discrete devices such as lasers, light-emitting diodes (LED’s), phototransistors, p-i-n diodes, and avalanche photodiodes (APD’s) has been drawing much attention for better performance and higher reliability [ 11, [2]. By integration, on the other hand, new functions which cannot be expected for the discrete optoelectronic devices can be realized utilizing the optical or electrical interactions between two or more optoelectronic devices [3]-[ ll].

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نویسنده: حمیدرضا ارزبین

توضیحاتی جامع در خصوص سلول های خورشیدی چند پیوندی

دسته بندی: لیزر و اپتیک ترجمه مقاله
توضیحاتی جامع در خصوص سلول های خورشیدی چند پیوندی
Mohandes360.ir
17 4 1399

این پژوهش یک مرور کلی از سلول های خورشیدی و سلول های خورشیدی چند پیوندی را بیان می کند. بخش اول این نوشتار فیزیک پایه و طراحی سلول های خورشیدی تک پیوندی را توصیف می کند. همچنین تاریخچه سلول های خورشیدی و مزایای استفاده از فناوری خورشیدی شرح داده می شوند. بخش دوم این مقاله فیزیک، طراحی و فرایند ساخت سلول های خورشیدی مولتی جانکشن را تشریح می کند. در این بخش روی توضیحات تمرکز شده و برخی از مشکلات بالقوه سلول های خورشیدی مولتی جانکشن توصیف می شوند. در بخش پایانی مقاله استفاده عملی از سلول های خورشیدی مولتی جانکشن و چشم انداز آن برای پیشرفت طراحی های آینده بحث می شود. در این بخش در مورد اینکه سلول های خورشیدی مولتی جانکشن که در حال حاضر وجود دارند و پیشرفت های ممکن آینده آنها بحث می شود. 
 

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نویسنده: حمیدرضا ارزبین

ترجمه مقاله Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers

دسته بندی: لیزر و اپتیک ترجمه مقاله
ترجمه مقاله Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers
Mohandes360.ir
18 4 1399

An effective BSF is a key structural element for an efficient solar cell, either in a multi-junction or in a single-junction device. In this paper, two important materials AlGaAs and InAlGaP with their varied thickness (i.e. 0.05–1.0) μm both for top BSF and bottom BSF cells are investigated using the computational numerical modeling TCAD tool Silvaco ATLAS. It has been found that under the current matching condition with the relatively thinner (30 nm) top BSF layer and the thicker (1,000 nm) bottom BSF layer, the cell exhibit an overall enhancement of short-circuit current density Jsc and open circuit voltage Voc thereby improving the overall efficiency of the cell. 

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نویسنده: حمیدرضا ارزبین